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| 2SK3752-01R FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive and Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Symbol Ratings VDS 500 ID 16 ID(puls] 64 VGS 30 IAS 16 EAS dVDS/dt dV/dt PD 212.2 20 5 3.13 95 +150 -55 to +150 Unit V A A V A mJ kV/s kV/s W Remarks Tch <150C = *1 VDS < 500V = *2 Ta=25C Tc=25C Equivalent circuit schematic Drain(D) Operating and storage Tch C temperature range Tstg C Isolation voltage VISO 2 kVrms t=60sec f=60Hz *1 L=1.52mH, Vcc=50V, Starting Tch=25C,See to Avalanche Energy Graph *2 IF < -ID, -di/dt=50A/s, VCC < BVDSS, Tch < 150C = = = Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS=500V VGS=0V Tch=125C VDS=400V VGS=0V VGS=30V VDS=0V ID=7A VGS=10V ID=7A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=7A VGS=10V RGS=10 VCC=250V ID=14A VGS=10V L=1.52mH Tch=25C IF=14A VGS=0V Tch=25C IF=14A VGS=0V -di/dt=100A/s Tch=25C Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.46 Units V V A nA S pF 7 10 0.35 14 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 33 50 12.5 19 10.5 16 1.00 0.65 6.0 ns nC 16 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.32 40.0 Units C/W C/W 1 2SK3752-01R Characteristics Allowable Power Dissipation PD=f(Tc) 100 90 80 70 FUJI POWER MOSFET Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 30 28 26 24 22 20 20V 10V 8V 7.5V 60 18 ID [A] PD [W] 16 14 12 10 8 VGS=6.5V 7.0V 50 40 30 20 10 0 0 25 50 75 Tc [C] 100 125 150 6 4 2 0 0 2 4 6 8 10 12 VDS [V] 14 16 18 20 22 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 10 10 ID[A] 1 gfs [S] 1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 0.1 0.1 1 ID [A] 10 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C 1.0 0.9 VGS=6.5V 0.8 7.0V 7.5V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=7A,VGS=10V 1.2 1.1 1.0 0.9 0.7 0.8 RDS(on) [ ] 0.5 0.4 0.3 8V 10V 20V RDS(on) [ ] 0.6 0.7 0.6 0.5 0.4 0.3 typ. max. 0.2 0.1 0.0 0 5 10 15 ID [A] 20 25 30 0.2 0.1 0.0 -50 -25 0 25 50 Tch [C] 75 100 125 150 2 2SK3752-01R FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 7.0 6.5 6.0 5.5 max. 5.0 4.5 Typical Gate Charge Characteristics VGS=f(Qg):ID=14A,Tch=25 C 24 22 20 18 250V 16 14 400V Vcc= 100V VGS(th) [V] VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 min. 12 10 8 6 4 1.0 0.5 0.0 -50 -25 0 25 50 75 Tch [C] 100 125 150 2 0 0 10 20 30 40 Qg [nC] 50 60 70 80 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10n 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 1n Ciss 10 C [F] 100p Coss IF [A] 1 0.1 0.00 10p Crss 1p 10 -1 10 0 10 1 10 2 10 3 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 500 450 400 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V IAS=7A 10 2 tr td(off) 350 300 IAS=10A EAS [mJ] t [ns] td(on) 10 1 250 200 150 100 tf IAS=16A 10 0 50 0 10 0 10 ID [A] 1 0 25 50 75 starting Tch [C] 100 125 150 3 2SK3752-01R Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=50V FUJI POWER MOSFET 10 2 Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 1 10 Zth(ch-c) [C/W ] 0 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
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